TSMC has honored ANSYS with its Open Innovation Platform® Partner of the Year 2014 award for joint development of 16-nanometer (nm) FinFET Plus design infrastructure. The award is given to TSMC OIP partners that have made significant contributions toward the development of design infrastructure for their latest process technologies. ANSYS was recognized for advanced power noise and reliability solutions that helped enable TSMC's 16nm FinFET Plus technology deployment.
ANSYS solutions for integrated circuits deliver reduced memory footprint and turnaround time to meet the demands of increased computational speed caused by the growing design complexity. TSMC and ANSYS collaborated on ANSYS®RedHawk™ and Totem™ tools in N16FF+ technology to ensure needed accuracy for static and dynamic voltage drop analysis, electromigration (EM) verification and thermal reliability sign-off of system-on-chip (SoC) and mixed-signal designs. FinFET technology is a three-dimensional transistor architecture that results in higher-performing and lower power chips used in mobile, computing and networking applications.
"ANSYS has partnered with TSMC to bring deep technical experience to address the new power and reliability challenges associated with 16nm FinFET Plus designs," said Suk Lee, TSMC senior director, Design Infrastructure Marketing Division. "We are pleased to award ANSYS with the TSMC Open Innovation Platform Partner of the Year 2014 Award for 16nm FinFET Plus development and collaboration, and look forward to continued collaborations that enable our customers to deliver products that run fast and consume less power."
"ANSYS is honored to be presented with this prestigious award from TSMC, recognizing our longstanding partnership in providing innovative solutions for power, noise and reliability sign-off of advanced manufacturing nodes," said Fares Mubarak, vice president and general manager of ANSYS. "This joint delivery of technology enables more robust integrated circuit designs and underscores our customer commitment."
