CIMdata PLM Industry Summary Online Archive

19 July 2004

Implementation Investments

Renesas Technology Selects Synopsys Star-RCXT for 90 Nanometer Designs

Synopsys Inc. ( http://www.synopsys.com ) announced that Renesas Technology Corp., a joint venture between Hitachi, Ltd. and Mitsubishi Electric Corporation has standardized on Synopsys' Star-RCXTT for resistive-capacitive (RC) parasitic extraction in its design flow. With Synopsys' Star-RCXT in their GalaxyT Design flow, Renesas Technology now has a complete sign-off solution that accelerates timing and signal integrity (SI) closure for their 130- and 90-nanometer (nm) designs.

"Using Synopsys' Star-RCXT for accurate RC parasitic extraction with PrimeTime® for static timing analysis, we successfully taped out several multimillion-gate chips," said Hisaharu Miwa, department manager, EDA Technology Development Department, Design Technology Division, LSI Product Technology Unit, Renesas Technology Corp. "Based on these results, we have standardized on Star-RCXT for parasitic extraction in our sign-off flow for 90 nanometer designs."

Star-RCXT supports key 90nm process capabilities including in-die process variation solutions-such as selective process biasing (spacing and width dependent metal bias), local density effects (LDE), length of diffusion (LOD)-and metal fill. In modeling such advanced silicon process features, Star-RCXT extracts highly accurate RC parasitics for PrimeTime SI to ensure concurrent timing and signal integrity sign-off.

 

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