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Tuesday, May 30, 2017

ANSYS Self-Heat, Power Integrity and Electromigration Solutions Enabled On Samsung's Latest FinFET Technology

Customers of Samsung Electronics and ANSYS are empowered to create the next generation of robust and reliable electronic devices thanks to Samsung's certification and enablement of ANSYS solutions.

This certification of self-heat for 10nm chip technologies and enablement of electromigration (EM) and voltage drop (IR) for the latest 7LPP/8LPP technologies reduces customers' design risk while providing the highest robustness and reliability to their high-performance computing, mobile and automotive applications.

For those applications where reliability over time is an absolute requirement, ANSYS solutions perform a variety of analyses of the Systems on Chips (SoCs), including extraction, power and reliability, signal and power integrity, and thermal reliability over the chip's expected life. ANSYS and Samsung collaborated on this certification and enablement process to provide customers with the most reliable solutions to develop innovative, reliable products faster while minimizing design costs and risk.

"Self-heat and thermal analyses are absolute requirements for automotive and high-performance computing applications," said Suk Won Kim, vice president of the Design Technology Team at Samsung Electronics. "We collaborated with ANSYS to enable their solutions for Samsung Foundry's leading-edge process platforms, empowering customers to create the most robust and reliable SoCs."

"Our collaboration with Samsung Foundry on the certification of ANSYS self-heat for 10nm chip technologies and enablement of EM/IR technology for their latest FinFET process technology platforms empower mutual customers to develop robust and reliable SoCs," said John Lee, general manager at ANSYS. "This certification and enablement prepares customers to build next-generation automotive and high-performance computing products with the required robustness, reliability and safety."

To view the original press release, please click here.

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